Gallium Nitride Stocks List
Symbol | Grade | Name | % Change | |
---|---|---|---|---|
LRCX | A | Lam Research Corporation | 0.92 | |
TGAN | B | Transphorm, Inc. | 0.00 | |
VECO | B | Veeco Instruments Inc. | 0.42 | |
QRVO | B | Qorvo, Inc. | -1.49 | |
NVTS | F | Navitas Semiconductor | 1.26 | |
WOLF | F | Wolfspeed, Inc. | -0.80 |
Related Industries: Semiconductor Equipment & Materials Semiconductors
Symbol | Grade | Name | Weight | |
---|---|---|---|---|
SEMI | B | Columbia Seligman Semiconductor and Technology ETF | 10.31 | |
TINY | A | ProShares Nanotechnology ETF | 8.38 | |
PSI | A | PowerShares Dynamic Semiconductors | 8.29 | |
FTXL | B | First Trust Nasdaq Semiconductor ETF | 6.12 | |
SOXS | F | Direxion Daily Semiconductor Bear 3x Shares | 5.94 |
Compare ETFs
- Gallium Nitride
Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.
Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in radiation environments.Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising characteristics for THz devices.
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