Magnetoresistive random-access memory (MRAM) is a non-volatile random-access memory technology available today that began its development in mid-1980s. Continued increases in density of existing memory technologies — notably flash RAM and DRAM — kept it in a niche role in the market, but its proponents believe that the advantages are so overwhelming that magnetoresistive RAM will eventually become a dominant type of memory, potentially even becoming a universal memory. It is currently in production by Everspin Technologies, and other companies, including GlobalFoundries and Samsung, have announced in 2016 product plans. A recent, comprehensive review article on magnetoresistance and magnetic random access memories is available as an open access paper in Materials Today.